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HIVE INF
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RCHIVE INFORMATION
MRF372R3 MRF372R5
5
RF Device Data
Freescale Semiconductor
R4BL4B
R5B
PCB Substrate (30 mil thick)
Motorola Vertical 860 MHz Balun
Rogers RO3010 (50 mil thick)
55 mil slot cut
out to accept Balun
Input
(50 ohm microstrip)
Output 2
(12.5 ohm microstrip)
Ground
Vertical Balun Mounting Detail
Note:
TrimBalunPCBsothata35mil”tab”
fits into the main PCB “slot” resulting
in Balun solder pads being level with
the PCB substrate solder pads when
fully inserted.
Output 1
(12.5 ohm microstrip)
MRF372
Rev 1a
C9
R1A
C3A
R2A
C3B
L1B
R2B
R1B
C10B
C10A
C1
C2
C4A
C4B
R3A
C6
C11 C13
L4A
C8A
C14A
C15
R3B
C14B
C8B
L2B
L2A
L1A
C5A
L3B
C5B
C7A
C7B
C12A
R5A
R4A
C12B
Figure 3. 860 MHz Narrowband Component Layout
L3A
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale
Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the
transition period. These changes will have no impact on form, fit or function of the current product.
相关PDF资料
MRF373ALSR5 MOSFET RF N-CHAN 32V 75W NI-360S
MRF374A IC MOSFET RF N-CHAN NI-650
MRF377HR3 MOSFET RF N-CHAN 32V 45W NI-860C
MRF5P20180HR6 MOSFET RF N-CHAN 28V 38W NI-1230
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相关代理商/技术参数
MRF372R5 功能描述:射频MOSFET电源晶体管 180W 860MHZ NI-860MOD RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF373 制造商:Freescale Semiconductor 功能描述:
MRF373A 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF Power Field Effect Transistors
MRF373AL 制造商:Freescale Semiconductor 功能描述:TRANS MOSFET N-CH 70V 3-PIN NI-360 - Bulk
MRF373ALR1 功能描述:射频MOSFET电源晶体管 75W 860MHZ LDMOS NI360L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF373ALR1_08 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF373ALR5 功能描述:射频MOSFET电源晶体管 75W 860MHZ LDMOS NI360L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF373ALSR1 功能描述:射频MOSFET电源晶体管 RF PWR LDMOS 75W NI360S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray